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HL: Fachverband Halbleiterphysik

HL 39: Poster III

HL 39.7: Poster

Mittwoch, 19. März 2025, 15:00–18:00, P3

Ultradoped GeSn plasmonic antennas for IR photodetection — •Guillermo Godoy^1,2, Ali Azimi³, Fritz Berkmann³, Oliver Steuer¹, Slawomir Prucnal¹, Shengqiang Zhou¹, Ing-Song Yu⁴, Inga A. Fischer³, and Yonder Berencén¹ — ¹Helmholtz Zentrum Dresden Rossendorf, Dresden Germany — ²Dresden University of Technology, Dresden Germany — ³BTU Cottbus-Senftenberg, Cottbus Germany — ⁴National Dong Hwa University, Hualien Taiwan

Ligth mater interaction due to localized surface plasmon resonances (LSPRs) can generate hight electical field enhacement, enabling biosensing and hot-electron photodetection devices. While metallic nanoparticles like Au and Al are commonly used, their optical losses increase at longer wavelengths, limiting applications in the mid-infrared (MIR) range, such as air pollution detection. Highly doped group-IV semiconductors, particularly GeSn alloys, offer a cost-effective alternative with lower losses and CMOS compatibility. The cut-off wavelength for plasmonic resonances depends on the carrier effective mass, and GeSn alloys with its lower electron effective mass enables plasmonic resonances from shorter wavelengths.This work explores strategies to achieve highly doped GeSn alloys for plasmon-enhanced photodetection, utilizing MBE or CVD-grown GeSn layers on Si substrates. These layers will be doped in-situ or ex-situ via ion implantation, followed by non-equilibrium annealing to enhance crystal quality and dopant activation, showcasing their potential for advancing MIR photodetection.

Keywords: GeSn; Plasmonics; Infrared; Photodetection