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HL: Fachverband Halbleiterphysik
HL 39: Poster III
HL 39.8: Poster
Mittwoch, 19. März 2025, 15:00–18:00, P3
Optical and phonon properties of In-rich InGaN alloys and InN/InGaN multiple quantum well structures — •Svitlana Polesya1, Masako Ogura1, Sergiy Mankovsky1, Gregor Koblmüller2, and Hubert Ebert1 — 1University of Munich, 81377 Munich, Germany — 2Technical University of Munich, 85748 Garching, Germany
In two-dimensional systems like multiple quantum well structures, thermalization of hot carriers can be strongly suppressed. InN/InGaN multilayered (ML) materials are seen as promising candidates to show this property. In order to optimize these materials, ab initio calculations have been performed on the electronic and phonon band structure, as well as on the optical properties of In-rich InxGa(1−x)N alloys and the short period ML systems [InN]m/[InxGa(1−x)N]n. All calculations have been done with the VASP package. The HSE exchange-correlation potential has been used with further GW0 corrections. Electron-hole interactions were taken into account by solving the Bethe-Salpeter equation. The calculations on alloys were done via the superlattice technique considering for each In concentration x all non-equivalent atomic arrangements. This is crucial as the atomic distribution has a significant impact on the phonon band structure of the alloys. For the layered [InN]m/[InxGa(1−x)N]n system the optical properties were calculated for various concentrations x. The important role of the interface between the quantum well ([InN]m) and the quantum barrier ([InxGa(1−x)N]n) on the optical properties as well as phonon band gap is shown.
Keywords: III-Nitrides; Optical properties; Phonons