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HL: Fachverband Halbleiterphysik
HL 4: 2D Materials and their Heterostructures I (joint session DS/HL)
HL 4.2: Vortrag
Montag, 17. März 2025, 15:15–15:30, H3
Twist-tunable spin control in twisted bilayer bismuthene — •Ludovica Zullo1,2,3,4, Domenico Ninno4,5, and Giovanni Cantele5 — 1Institut für Theoretische Physik und Astrophysik and Würzburg-Dresden Cluster of Excellence ct.qmat, Universität Würzburg, 97074 Würzburg, Germany — 2Department of Physics, University of Trento, Via Sommarive 14, 38123 Povo, Italy — 3Sorbonne Université, CNRS, Institut des Nanosciences de Paris, UMR7588, F-75252 Paris, France — 4Dipartimento di Fisica E. Pancini, Università degli Studi di Napoli *Federico II*, Complesso Universitario M. S. Angelo, via Cintia 21, 80126, Napoli, Italy — 5CNR-SPIN, c/o Complesso Universitario M. S. Angelo, via Cintia 21, 80126, Napoli, Italy
The role of spin-orbit coupling (SOC) in twisted bilayers has gained increasing attention due to its potential for spintronics, opening a quest for new layers with substantial SOC. In this work [1], by means of first principles calculations, we investigate how the interplay between SOC and twist angle impacts the band structure and spin textures of twisted bilayer bismuthene. We find that the twist angle can be deemed a control knob to switch from a small-gap semiconductor to a metallic behavior. Most crucially, the accurate analysis of the energy bands close to Fermi energy reveals a twist-tunable splitting in the mexican-hat shape of the bands that can otherwise be obtained only by applying enormous electric fields, providing insight into innovative technologies for future spintronic devices. [1] Ludovica Zullo, Domenico Ninno, Giovanni Cantele, Phys. Rev. B, 110, 165411 (2024)
Keywords: Twistronics; Spin-orbit coupling; 2D materials; Bismuthene