Regensburg 2025 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 4: 2D Materials and their Heterostructures I (joint session DS/HL)

HL 4.8: Vortrag

Montag, 17. März 2025, 17:00–17:15, H3

Magnetic and transport properties of all-epitaxial Fe_5−xGeTe₂/WSe₂ van der Waals heterostructures — •Hua Lv¹, Tauqir Shinwari¹, Kacho I. A. Khan¹, Jens Herfort¹, Michael Hanke¹, Chen Chen², Joan M. Redwing², Achim Trampert¹, Mehak Loyal³, Gerhard Jakob³, Mathias Kläui³, Roman Engel-Herbert¹, and João Marcelo J. Lopes¹ — ¹Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Berlin, Germany — ²2D Crystal Consortium Materials Innovation Platform, Materials Research Institute, The Pennsylvania State University, PA, United States — ³Institute of Physics, Johannes Gutenberg University Mainz, Mainz, Germany

Van der Waals (vdW) heterostructures consisting of two-dimensional (2D) ferromagnetic and nonmagnetic materials hold great promises for tailoring their magnetic and transport properties. Here we report on the magnetic and transport properties of all-epitaxial Fe_5−xGeTe₂ (FGT, with x ≈ 0.2)/WSe₂ heterostructures tailored via the FGT thickness. Magnetic characterizations and anomalous Hall effect measurements with both out-of-plane and in-plane magnetic fields reveal an enhanced perpendicular magnetic anisotropy (PMA) in thinner FGT and a ferromagnetic order up to room temperature. The pronounced unconventional Hall effect (UHE) suggests the possible formation of skyrmions. The thickness-dependent asymmetric magnetoresistance reveals a unique magnetization switching process. Our results demonstrate the high potential of all-epitaxial FGT/WSe₂ heterostructures for the advancement of future 2D spintronic applications.

Keywords: 2D magnets; 2D spintronics; perpendicular magnetic anisotropy; topological Hall effect; molecular beam epitaxy