Regensburg 2025 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
HL: Fachverband Halbleiterphysik
HL 4: 2D Materials and their Heterostructures I (joint session DS/HL)
HL 4.9: Talk
Monday, March 17, 2025, 17:15–17:30, H3
Effect of Ni-doping on the structural/magnetic properties of large area epitaxial 2D-ferromganet Fe3GeTe2 — •Kacho Imtiyaz Ali Khan1, Tauqir Shinwari1, Hua Lv1, Frans Munnik2, Jens Herfort1, Michael Hanke1, and Joao Marcelo J. Lopes1 — 1Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Berlin, Germany — 2Helmholtz-Zentrum Dresden- Rossendorf e.V. Dresden, Germany
2D ferromagnets with strong perpendicular magnetic anisotropy exhibit magnetic order down to the monolayer thickness and have the potential to overcome long-term challenges faced by 3D ferromagnets to build up advanced energy-efficient spintronic devices. In this work, we show the large-area epitaxial growth of Ni-doped Fe3GeTe2 films via molecular beam epitaxy. X-ray diffraction measurements demonstrate high-quality epitaxy of pure Fe3GeTe2 phase on graphene/SiC(0001) substrates. Magneto-transport measurement unveils the ferromagnetic nature of the film, with strong perpendicular magnetic anisotropy for pure Fe3GeTe2 and Ni-doped films. However, the Ni-doped Fe3GeTe2 shows a decrease in Curie temperature TC with an increase in Ni-doping. We believe that the Ni doping modifies the lattice parameters and structure (e.g., Ni intercalation), which results in the dilution of magnetic properties of Fe3GeTe2 by reducing the TC down to 50 K. Our findings show the role of Ni incorporation on the ferromagnetic behavior of Fe3GeTe2 films, which is crucial for the development of future spintronic devices.
Keywords: Molecular beam epitaxy; Perpendicular magnetic anisotropy; Ni-doping; 2D ferromagnet; 2D spintronics