Regensburg 2025 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 40: 2D Semiconductors and van der Waals Heterostructures IV
HL 40.2: Vortrag
Mittwoch, 19. März 2025, 15:45–16:00, H15
Raman Polarization Switching in CrSBr — •Priyanka Mondal1, Daria I. Markina1, Lennard Hopf1, Lukas Krelle1, Sai Shradha1, Julian Klein2, Mikhail M. Glazov3, Iann Gerber4, Kevin Hagmann1, Regine v. Klitzing1, Kseniia Mosina5, Zdenek Sofer5, and Bernhard Urbaszek1 — 1TU Darmstadt, Darmstadt, Germany — 2Massachusetts Institute of Technology, Cambridge, United States — 3St. Petersburg, Russia — 4Université de Toulouse,Toulouse, France — 5University of Chemistry and Technology, Prague,Czech Republic
Semiconducting CrSBr is a layered A-type antiferromagnet, with individual layers antiferromagnetically coupled along the stacking direction. Due to its unique orthorhombic crystal structure, CrSBr exhibits highly anisotropic mechanical and optoelectronic properties acting itself as a quasi-1D material. CrSBr demonstrates complex coupling phenomena involving phonons, excitons, magnons, and polaritons. Here we show through polarization-resolved resonant Raman scattering the intricate interaction between the vibrational and electronic properties of CrSBr. For samples spanning from few-layer to bulk thickness, we observe that the polarization of the Ag2 Raman mode can be rotated by 90 degrees, shifting from alignment with the crystallographic a (intermediate magnetic) axis to the b (easy magnetic) axis, depending on the excitation energy. In contrast, the Ag1 and Ag3 modes consistently remain polarized along the b axis, regardless of the laser energy used. We access real and imaginary parts of the Raman tensor in our analysis, uncovering resonant electron-phonon coupling.
Keywords: CrSBr; Light matter interaction; Polarization dependent Raman spectroscopy; electron -phonon interaction; 2D anistropic material