Regensburg 2025 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 40: 2D Semiconductors and van der Waals Heterostructures IV
HL 40.3: Talk
Wednesday, March 19, 2025, 16:00–16:15, H15
Resonant Inelastic Light Scattering on CrSBr — •Jan-Hendrik Larusch1, Pierre-Maurice Piel1, Nicolai-Leonid Bathen1, Zdenek Sofer2, and Ursula Wurstbauer1 — 1Institute of Physics, University of Münster, Germany — 2Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Prague, Czech Republic
The van der Waals material CrSBr is an optically active semiconductor and an air-stable 2D magnet with ferromagnetic (FM) ordering within each layer and antiferromagnetic (AFM) coupling between adjacent layers, alongside triaxial magnetic anisotropy. Additionally, CrSBr has a highly anisotropic electronic band structure, rendering it a quasi-one-dimensional electronic system, resulting in linearly polarized excitons that are strongly bound [1]. Distinct differences in excitonic emission signatures arise depending on the transition in magnetic ordering from AFM to FM states [2]. To study the coupling between excitons and collective excitations, we employ magnetic field-dependent resonant inelastic light scattering (RILS) experiments at temperatures well below the Néel temperature (~4K). While first-order phonon modes in Raman spectra remain mostly unaffected by magnetic ordering, RILS reveals resonantly enhanced as well as additional, magnetic field-dependent modes. The later are interpreted as spin-density excitations aka magnon modes. The combined PL and RILS study reveal strong interactions between electronic, excitonic, lattice and spin degrees of freedom. [1] J. Klein et al. ACS Nano, 17, 5316-5328 (2023) [2] M.C. Heißenbüttel et al. (2024). arXiv:2403.20174.
Keywords: Resonant Inelastic Light Scattering; Photoluminescence; CrSBr; 2D-vdW-Semiconductor; Anisotropy