Regensburg 2025 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 40: 2D Semiconductors and van der Waals Heterostructures IV

HL 40.5: Talk

Wednesday, March 19, 2025, 16:45–17:00, H15

Spin Hall effect in van-der-Waals ferromagnet — •Tomoharu Ohta^1,2, Nan Jiang^3,4,5, Yasuhiro Niimi^3,4,5, Kohei Yamagami⁶, Yoshinori Okadada⁶, Yoshichika Otani^7,8, and Kouta Kondou^4,8 — ¹Walter Schottky Institute and Physics Department, Technical University of Munich, Garching, Germany — ²Munich Center for Quantum Science and Technology (MCQST), München, Germany — ³Depertment of Physics, Osaka University, Osaka, Japan — ⁴Institute for Open and Transdisciplinary Research Initiatives (OTRI), Osaka, Japan — ⁵Center for Spintronics Research Network (CSRN), Osaka, Japan — ⁶Okinawa Institute of Science and Technology, Graduate University, Okinawa, Japan — ⁷Institute for Solid State Physics, The University of Tokyo Chiba, Japan — ⁸RIKEN Center for Emergent Matter Science (CEMS), Saitama, Japan

We investigated the spin Hall effect (SHE) in a vdW ferromagnet Fe5GeTe2 (FGT) with a TC of 310 K utilizing the spin torque ferromagnetic resonance method. In synchronization with the emergence of the ferromagnetic phase resulting in the anomalous Hall effect (AHE), a noticeable enhancement in the SHE was observed below TC. On the other hand, the SHE shows a different temperature dependence from the AHE below 120 K: the effective spin Hall conductivity clearly enhanced below TC unlike the anomalous Hall conductivity, might be reflecting variation of band-structure accompanied by the complicated magnetic ordering of the FGT. The results provide a deep understanding of the SHE in magnetic materials to open a new route for novel functionalities in vdW materials-based spintronic devices.

Keywords: van der Waals ferromagnet; electrical transport; spin Hall effect