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HL: Fachverband Halbleiterphysik

HL 40: 2D Semiconductors and van der Waals Heterostructures IV

HL 40.7: Vortrag

Mittwoch, 19. März 2025, 17:15–17:30, H15

Strong magnetic proximity effect in van der Waals heterostructures driven by direct hybridization — •Claudia Cardoso¹, Antomio T. Costa², Allan H. McDonald³, and Joaquin Fernandez-Rossier² — ¹S3 Centre, Istituto Nanoscienze, CNR, Via Campi 213/a, 41125 Modena, Italy — ²International Iberian Nanotechnology Laboratory, 4715-330 Braga, Portugal — ³Physics Department, University of Texas at Austin, Austin, Texas 78712, USA

Proximity effects may induce an electronic property of a material, to an adjacent material in which that property is not present. Here we propose a class of magnetic proximity effects based on the spin-dependent hybridisation. We consider the hybridisation between the electronic states at the Fermi energy in a nonmagnetic conductor and the narrow spin-split bands of a ferromagnetic insulator.

Unlike conventional exchange proximity, this proximity effect has a strong impact on the nonmagnetic layer and can be further modulated by application of an electric field.

Using density functional theory calculations, we illustrate this effect in graphene placed next to a monolayer of CrI₃, a ferromagnetic insulator. The calculations show a strong hybridisation of the graphene bands with the narrow conduction band of CrI₃ in one spin channel only. Furthermore, the results confirm that the hybridisation strength can be modulated by an out-of-plane electric field, paving the way for applications.

Keywords: van der Waals heterostructures; proximity effect; density functional theory; 2D materials