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HL: Fachverband Halbleiterphysik

HL 41: Spin Phenomena in Semiconductors

HL 41.1: Vortrag

Mittwoch, 19. März 2025, 15:45–16:00, H17

The charge cycle of the silicon vacancy in diamond — •Joshua Claes, Bart Partoens, and Dirk Lamoen — University of Antwerp, Antwerp, Belgium

Color centers in wide bandgap semiconductors are point defects with strongly localized electrons, resembling atom-like systems that can be optically controlled. These defects hold great promise for advancing quantum technologies, including quantum sensing and quantum computing. Among them, the silicon vacancy (SiV) center in diamond stands out as a particularly promising candidate due to its narrow optical emission and long spin coherence time, lasting up to 1 second at cryogenic temperatures in its neutral state.

A key challenge for the practical use of such defects is the precise measurement of their spin state. Photoelectric detection of magnetic resonance (PDMR) is a promising technique that measures the spin state by inducing charge state transitions and capturing the released electron or hole. In this work, we employ density functional theory with the HSE06 hybrid functional to calculate the onset energies and optical cross-sections for charge state transitions of the SiV center in diamond, ranging from -2 to 0.

Using this data, we model the PDMR experiment to predict charge transitions as a function of the laser frequency applied, providing insights into the defect's behavior under experimental conditions.

Keywords: Color centers; SiV; DFT; Diamond; Point defects