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HL: Fachverband Halbleiterphysik
HL 41: Spin Phenomena in Semiconductors
HL 41.3: Vortrag
Mittwoch, 19. März 2025, 16:15–16:30, H17
Optically induced spin electromotive force in ferromagnetic-semiconductor quantum well structure — •Olga Ken1,2, Igor Rozhansky2, Ina Kalitukha1,2, Grigory Dimitriev2, Mikhail Dorokhin3, Boris Zvonkov3, Dmitri Arteev2, Nikita Averkiev2, and Vladimir Korenev2 — 1TU Dortmund, Dortmund, Germany — 2Ioffe Institute, St. Petersburg, Russia — 3Lobachevsky State University of Nizhny Novgorod, Russia
We study hybrid structures which consist of ferromagnetic (FM) layer and a semiconductor quantum well (QW) and present here a systematic approach combining the optical and electrical detection of the spin-dependent electron transfer with nanoscale spatial resolution. Spin-dependent transfer is manifested in three spectacular effects: PL circular polarization under unpolarized excitation, dependence of the PL intensity from the QW on the circular polarization degree of the excitation, and spin-dependent photo-voltage across the junction. We show that in GaMnAs/GaAs/InGaAs heterostructure all the three parameters demonstrates similar non-linear magnetic field dependences with hysteresis loop saturating in ~100 mT [1]. This indicates the interaction of charge carriers in the QW with the FM, i.e. the FM proximity effect [2].
[1] I.V. Rozhansky et al. Nano Letters 23, 3994 (2023).
[2] V. L. Korenev et al. Nature Commun. 3, 959 (2012).
Keywords: spin-dependent photovoltage; ferromagnet; circular polarization; photoluminescence; quantum well