Regensburg 2025 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 42: Quantum Dots and Wires: Optics I
HL 42.5: Talk
Wednesday, March 19, 2025, 18:00–18:15, H17
Deoxidization induced InAs(P) single photon emitter formation on InP substrate — •Yiteng Zhang1, Xin Cao1, Doaa Abdelbarey1, Zenghui Jiang1, Markus Etzkorn2, Chenxi Ma1, Tom Fandrich1, Arijit Chakraborty1, Tom Rakow1, Eddy Rugeramigabo1, Michael Zopf1,3, and Fei Ding1,3 — 1Institut für Festkörperphysik, Leibniz Universität Hannover, Appelstraße 2, 30167, Hannover, Germany — 2Technische Universität Braunschweig,LENA, Institut für Angewandte Physik, Universitätsplatz 2, 38106 Braunschweig — 3Laboratorium für Nano- und Quantenengineering, Leibniz Universität Hannover, Schneiderberg 39, 30167, Hannover, Germany
Efficient quantum light sources at telecom O-band and C-band are essential for long-haul quantum communication to minimize photon dispersion and loss. While semiconductor quantum dots (QDs) grown by Stranski-Krastanov and droplet epitaxy methods show promise, their reproducibility is hindered by complex growth parameters. Here, we present a straightforward method to fabricate self-assembled InAs(P) QDs emitting single photons at telecom O-band using molecular beam epitaxy. By deoxidizing and annealing InP(001) substrates in an arsenic atmosphere, QDs form naturally without additional metal deposition. Statistical analysis reveals size distribution and density comparable to QDs from conventional methods. Cryogenic photoluminescence confirms single-photon emission. This approach offers a reproducible and efficient pathway to telecom-wavelength single-photon sources, advancing quantum information technologies.
Keywords: semiconductor quantum dots; InAsP; single-photon emission; As-P exchange