Regensburg 2025 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 42: Quantum Dots and Wires: Optics I
HL 42.6: Talk
Wednesday, March 19, 2025, 18:15–18:30, H17
Excitonic structure of G center computed by unfolded tight-binding model — •Jakub Valdhans1 and Petr Klenovský1,2 — 1Masaryk University, Brno, Czech Republic — 2Czech Metrology Institute, Brno, Czech Republic
We have studied the carbon G center in bulk silicon and germanium using the empirical tight-binding (ETB) model for calculating unfolded band structures with configuration interaction (CI) correction for an exciton. The G center in B configuration (emissive) being a candidate for a telecom single photon source has two substitutional carbons and one interstitial atom embedded in the bulk for 6 possible configurations. Using advantage of low computation effort of ETB, it is possible to calculate and analyze behavior of electronic transitions with respect to a variation of bond distance between substitutional carbons and interstitial atom, and with using band offset as external tuning parameter.
Keywords: G center; Band structure; Empirical tight-binding; Unfolding; Configuration interaction