Regensburg 2025 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 45: Perovskite and Photovoltaics II (joint session HL/KFM)
HL 45.11: Vortrag
Donnerstag, 20. März 2025, 12:15–12:30, H13
Phase evolution of sequential evaporated (FA/Cs)SnI3 halide perovskite thin films via in situ X-ray diffraction — •Pu-Chou Lin1, Josha Damm1, Roland Scheer1, and Paul Pistor2 — 1Institute of Physics, Photovoltaics Group, Martin-Luther-University, 06120 Halle, Germany — 2Departamento de Sistemas Físicas, Universidad Pablo de Olavide, 41013 Sevilla, Spain
Tin-based halide perovskites, particularly FASnI3 and CsSnI3, offer promising potential for photovoltaic applications. This study employs in situ X-ray diffraction to investigate these materials’ real-time growth mechanisms and thermal stability during sequential vapor deposition and annealing. Our results demonstrate that the deposition sequence significantly impacts the resulting perovskite film quality. For FASnI3, the SnI2-FAI stack yields superior, cavity-free films compared to the FAI-SnI2 stack. This suggests that FAI is the primary diffusing species, with FASnI3 forming at interfaces and completing its formation around 160∘C. In contrast, the CsSnI3 system exhibits more complex behavior. The SnI2-CsI sequence leads to the formation of the intermediate phase Cs2SnI6, while the CsI-SnI2 sequence directly forms CsSnI3 with minimal defect formation. This suggests that SnI2 is the dominant diffusing species in the Cs-based system. FASnI3 and CsSnI3 undergo thermal degradation at 200∘C and 240∘C, respectively, through co-desorption of their constituent elements. These findings provide valuable insights into tin-based perovskites’ growth mechanisms and thermal stability, which can guide future efforts to improve their performance and long-term stability.
Keywords: Halide perovskites; Physical vapor deposition; in situ X-ray diffraction; Formamidinium tin iodide; Cesium tin iodide