Regensburg 2025 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 45: Perovskite and Photovoltaics II (joint session HL/KFM)
HL 45.12: Talk
Thursday, March 20, 2025, 12:30–12:45, H13
Determining the key parameters of 3C-SiC photoelectrodes for water splitting application — •Marius Wasem1,2, Sebastian Benz1,3, Philip Klement1,2, Joachim Sann1,3, Jürgen Janek1,3, Sangam Chatterjee1,2, and Matthias T. Elm1,2,3 — 1Center for Materials Research, Heinrich-Buff-Ring 16, 35392 Giessen — 2Institute of Experimental Physics I, Heinrich-Buff-Ring 16, 35392 Giessen — 3Institute of Physical Chemistry, Heinrich-Buff-Ring 17, 35392 Giessen
We investigated the photoelectrochemical properties of n- and p-doped 3C-SiC thin films on n- or p-doped Si substrates, respectively, in a phosphate buffer solution. Key parameters such as the flat band potential and open-circuit potential were determined using various electrochemical methods. The combination of ultraviolet photoelectron spectroscopy and low energy inverse photoelectron spectroscopy measurements yields the estimation of the positions of the Fermi level, as well as the positions of the valence and conduction bands of the differently doped 3C-SiC thin films. Impedance spectroscopy characterized the interfacial processes in more detail. The flat band potential was derived from the space-charge layer capacitance using Mott-Schottky analysis. The determination of these key parameters enabled the construction of an energy level diagram, which explains the electrochemical behavior of n- and p-type 3C-SiC thin films under both dark conditions and illumination.
Keywords: 3C-SiC; Photoelectrochemical Solar Cell; Electrochemistry; Water Splitting