Regensburg 2025 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 49: 2D Materials: Electronic Structure and Exitations III (joint session O/HL/TT)
HL 49.1: Talk
Thursday, March 20, 2025, 10:30–10:45, H11
Charge ordered phases in the hole-doped triangular Mott insulator 4Hb-TaS2 — •Byeongin Lee1, Junho Bang1, Hyungryul Yang1, Sunghun Kim2, Dirk Wulferding3, and Doohee Cho1 — 1Department of Physics, Yonsei University, Seoul 03722, Republic of Korea — 2Department of Physics, Ajou University, Suwon 16499, Republic of Korea — 3Center for Correlated Electron Systems, Institute for Basic Science, Seoul 08826, Republic of Korea
4Hb-TaS2 has a unique layered structure, featuring a heterojunction between a 2D triangular Mott insulator and a charge density wave metal. Since a frustrated spin state in the correlated insulating layer is susceptible to charge ordering with carrier doping, it is required to investigate the charge distribution driven by interlayer charge transfer to understand its various phases. In this study, we utilize scanning tunneling microscopy and spectroscopy (STM/S) to examine the charge-ordered phases of 1T-TaS2 layers within 4Hb-TaS2, explicitly focusing on the non-half-filled regime. Our STS findings reveal an energy gap that exhibits an out-of-phase relation of the charge density. We attribute the emergence of the charge-ordered insulating phase in a doped triangular Mott insulator to the interplay between on-site and nonlocal Coulomb repulsion.
Keywords: Charge density waves; Transition metal dichalcogenides; Mott insulators; Scanning tunneling microscopy