Regensburg 2025 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 5: 2D Materials Beyond Graphene: Growth, Structure and Substrate Interaction (joint session O/HL)
HL 5.12: Vortrag
Montag, 17. März 2025, 17:45–18:00, H11
CVD growth of monolayer transition metal dichalcogenides heterostructures using liquid precursors — •Md Tarik Hossain1, Axel Printschler1, Julian Picker1, Christof Neumann1, Moritz Quincke2, Johannes Biskupek2, Ute Kaiser2, and Andrey Turchanin1 — 1Institute of Physical Chemistry, Friedrich Schiller University Jena, Jena 07743, Germany — 2Central Facility of Electron Microscopy, Electron Microscopy Group of Material Science, University of Ulm, Ulm 89081, Germany
Heterostructures (HSs) formed of transition metal dichalcogenide (TMD) monolayers have attracted substantial research interest due to their unique physical properties. However, engineering the HS configurations (lateral and vertical) including the domain size for each TMD remains challenging. Here we present a facile route for the synthesis of different types of HSs of TMD monolayers using liquid precursors for transition metals. We characterized the TMD HSs by several complementary spectroscopy and microscopy techniques. Our results suggest that the HS configurations, lateral length and area of each TMD can be tuned by varying concentration ratios of the precursors. In addition, the overall heterostructure sizes can also be tuned from few to hundreds of micrometers. The developed method paves the way to obtaining high-quality lateral and vertical HS of MoSe2-WSe2 with controllable domain sizes.
Keywords: TMDs; CVD growth; Heterostructures