Regensburg 2025 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 50: 2D Materials: Stacking and Heterostructures (joint session O/HL)
HL 50.7: Vortrag
Donnerstag, 20. März 2025, 16:30–16:45, H6
Nanoscale band-gap modulation and dual moiré superlattices in the weakly-coupled h-BN/graphite heterostructure — Fábio J. R. Costa1,2, Luiz F. Zagonel1, Tin S. Cheng3, Jonathan Bradford3, Christopher J. Mellor3, Peter H. Beton3, Sergei V. Novikov3, Juliette Plo4, Bernard Gil4, Guillaume Cassabois4,5, Klaus Kuhnke2, Klaus Kern2,6, and •Anna Rosławska2 — 1Unversity of Campinas, Brazil — 2Max Planck Institute for Solid State Research, Stuttgart, Germany — 3University of Nottingham, United Kingdom — 4Laboratoire Charles Coulomb, Montpellier, France — 5Institut Universitaire de France, Paris, France — 6EPFL, Lausanne, Switzerland
Van der Waals materials, such as hexagonal boron nitride (h-BN), and their heterostructures are highly promising for novel nanophotonic and electronic devices. In such stacks, moiré patterns arise and modulate the electronic properties of the material at the scale of typical superstructure periods (approx. 10 nm), and as such are challenging to probe. Here, we investigate the moiré superlattices in the weakly coupled h-BN/graphite heterostructure at the atomic scale. Scanning tunneling microscopy (STM) imaging reveals extensive moiré unit cells on the surface, while spectroscopic measurements demonstrate significant modulation in the work function and band gap across the periodic supercell. Additionally, we identify a dual moiré superlattice in twisted bilayers of h-BN on graphite, providing an extra degree of freedom to tune the heterostructure’s properties.
Keywords: hexagonal boron nitride; graphite; moiré pattern; scanning tunneling microscopy