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HL: Fachverband Halbleiterphysik
HL 51: Transport Properties (joint session HL/TT)
HL 51.4: Vortrag
Donnerstag, 20. März 2025, 15:45–16:00, H13
Analysis of the electrical transport properties of MBE grown cubic Galliumnitride (c-GaN) sample structures — •Hannes Hergert1,2, Mario F. Zscherp1,2, Silas A. Jentsch1,2, Jörg Schörmann1,2, Sangam Chatterjee1,2, Peter J. Klar1,2, and Matthias T. Elm1,2,3 — 1Center for Materials Research, Heinrich-Buff-Ring 16, 35392 Giessen — 2Institute of Experimental Physics I, Heinrich-Buff-Ring 16, 35392 Giessen — 3Institute of Physical Chemistry, Heinrich-Buff-Ring 17, 35392 Giessen
Due to its lack of internal polarization fields cubic gallium nitride (c-GaN) is a promising semiconductor system for ’more-than-Moore’ applications such as high-power electronics or optoelectronic devices. The analysis of its electrical transport properties is challenging since the molecular beam epitaxy (MBE) growth of high-quality c-GaN thin films requires a complex substrate architecture in order to accommodate the lattice mismatch between c-GaN and the 3C-SiC template. However, a reliable characterization of the electrical transport properties of c-GaN is crucial for the design of advanced functional devices. Here we analyze the electrical transport properties of the whole sample structure (MBE grown c-GaN/c-AlN thin films onto a 3C-SiC/Si template) with different c-GaN thicknessses using electrochemical impedance spectroscopy (EIS) as well as angle- and temperature-dependent magnetoresistance (MR) measurements. MR measurements reveal the existence of a highly conductive channel while EIS measurements allow the determination of the position of the channel between the c-AlN thin film and the 3C-SiC layer.
Keywords: Hall measurements; electrochemical impedance spectroscopy; cubic GaN; angle-dependent; galliumnitride