Regensburg 2025 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 51: Transport Properties (joint session HL/TT)

HL 51.6: Talk

Thursday, March 20, 2025, 16:30–16:45, H13

Ab initio investigation of drag effect in germanium — •Dwaipayan Paul and Nakib Protik — Humboldt-Universität zu Berlin, Zum Großen Windkanal 2, 12489 Berlin, Germany

In a system of interacting electrons and phonons, the transport of one induces transport in the other. This phenomenon is known as the electron-phonon drag effect [1]. Now, an important milestone in the history of drag physics is the first recorded measurement of this phenomenon in germanium [2]. Here we present the results of our ab initio computations of the thermoelectric transport coefficients of germanium for various temperatures and charge carrier concentrations using the elphbolt code [3]. We investigate how the various scattering channels in the system enable this material to exhibit strong drag phenomena.

[1] Gurevich, Yu G., and O. L. Mashkevich. "The electron-phonon drag and transport phenomena in semiconductors." Physics Reports 181.6 (1989): 327-394.

[2] Frederikse, H. P. R. "Thermoelectric power of germanium below room temperature." Physical Review 92.2 (1953): 248.

[3] Protik, Nakib H., et al. "The elphbolt ab initio solver for the coupled electron-phonon Boltzmann transport equations." npj Computational Materials 8.1 (2022): 28.

Keywords: electron-phonon drag; Boltzmann; Ab initio; germanium