Regensburg 2025 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 52: Oxide Semiconductors II
HL 52.6: Vortrag
Donnerstag, 20. März 2025, 16:30–16:45, H14
Ultraviolet Emission from 6P7/2 Stark Manifold in Gd-Implanted β-Ga2O3 Thin Films — •Martin S. Williams1,2, Mahmoud Elhajhasan1, Marco Schowalter1, Lewis Penman3, Alexander Karg1, Fabien C.-P. Massabuau3, Andreas Rosenauer1, Gordon Callsen1, Carsten Ronning4, Martin Eickhoff1,2, and Manuel Alonso-Orts1,2 — 1Institute of Solid State Physics, University of Bremen, Otto-Hahn-Allee 1, 28359 Bremen, Germany — 2MAPEX Center for Materials and Processes, University of Bremen, Bibliothekstraße 1, 28359 Bremen, Germany — 3Department of Physics, SUPA, University of Strathclyde, Glasgow, United Kingdom — 4Institute of Solid State Physics, Friedrich-Schiller-University Jena, Helmholtzweg 3, 07743 Jena, Germany
Monoclinic gallium oxide (β-Ga2O3) is a promising ultra-wide band gap semiconductor for the next generation of optoelectronic devices. Despite its attractive material properties, its luminescence spectrum is dominated by defect emission in the visible spectral range and a dominating UV emission in β-Ga2O3 has rarely been observed. An enhancement of the UV emission in β-Ga2O3 by optically active ion doping in β-Ga2O3 is only achieved with gadolinium (Gd3+).
In this work, β-Ga2O3 thin films grown by molecular beam epitaxy and atomic layer deposition are implanted with Gd and thermally activated. Four separate luminescence peaks, from the Stark-split 6P7/2→ 8S7/2 transition in Gd3+, are individually resolved with linewidth ≤ 2 meV. The influence of growth technique, implantation parameters and annealing temperature is investigated.
Keywords: Gallium oxide; Gadolinium; Rare-earth ion; Ion implantation; Photoluminescence