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HL: Fachverband Halbleiterphysik

HL 52: Oxide Semiconductors II

HL 52.8: Vortrag

Donnerstag, 20. März 2025, 17:00–17:15, H14

Revealing the incorporation site and local structure of Ni and Se in doped CuI thin films — •Mustafa G. Yazlak¹, Christiane Dethloff¹, Philipp Storm¹, Michael Lorenz¹, Sandra Montag¹, Hans H. Falk¹, Edmund Welter², Sofie Vogt¹, Marius Grundmann¹, and Claudia S. Schnohr¹ — ¹Felix Bloch Institute for Solid State Physics, Leipzig University, Germany — ²Deutsches Elektronen-Synchrotron DESY, Hamburg, Germany

This study investigates polycrystalline CuI thin films with varying nickel (Ni) and selenium (Se) concentrations, grown on glass substrates using Pulsed Laser Deposition (PLD) and co-sputtering. CuI:Ni thin films, with 1*30 at% Ni and thicknesses between 0.1*1.0 µm, and CuI:Se thin films, with 0.4*3.8 at% Se and ∼1.0 µm thickness, were prepared and capped with Al₂O₃ layers to prevent oxidation. X-ray Absorption Spectroscopy (XAS) at low temperatures (∼10 K) was conducted at the Cu, Se, and Ni K-edges to study the local structure of Ni and Se in the CuI matrix. The near edge structure and extended fine structure for a pure CuI thin film at the Cu K-edge suggests possible Cu oxidation. For CuI:Ni thin films, an increase in Ni concentration correlates with reduced Cu oxidation because Ni prefers to bond with oxygen rather than iodine, forming disordered NiO as seen from the Ni K-edge spectra. For CuI:Se thin films, the Cu K-edge spectra show small changes but no clear trend with Se content and the Se K-edge spectra indicate a Cu neighborhood similar to Cu₂Se and CuSe. Quantitative analyses are in progress to provide a deeper understanding of how Ni and Se content affects local structural changes.

Keywords: copper iodide; oxides; thin films; doping; X-ray Absorption Spectroscopy (XAS)