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HL: Fachverband Halbleiterphysik
HL 54: Ultra-fast Phenomena II
HL 54.3: Vortrag
Donnerstag, 20. März 2025, 15:30–15:45, H17
Picosecond Femtojoule Resistive Switching in Nanoscale VO2 Memristors — •Sebastian Schmid1,2, Laszlo Posa1,3, Timea Török1,3, Botond Santa1,4, Zsigmond Pollner1, Györgi Molnar3, Yannik Horst5, Janos Volk3, Juerg Leuthold5, Andras Halbritter1,4, and Miklos Csontos5 — 1Department of Physics, Institute of Physics, Budapest University of Technology and Economics, H-1111 Budapest, Hungary — 2Experimental Physics V, Center for Electronic Correlations and Magnetism, University of Augsburg, Augsburg 86159, Germany — 3Institute of Technical Physics and Materials Science, HUN-REN Centre for Energy Research, 1121 Budapest, Hungary — 4HUN-REN-BME Condensed Matter Research Group, H-1111 Budapest, Hungary — 5Institute of Electromagnetic Fields, ETH Zurich, 8092 Zurich, Switzerland
The dynamics of the Mott transition in correlated electron oxides could provide a sustainable alternative to the von Neumann computation by exploiting device-level functional complexity at low energy consumption. We fabricated nanoscale VO2 devices and tested them in our picosecond timeresolution, real-time resistive switching experiments, using 20 ps short and <1.7 V amplitude voltage pulses. There we observed tunable resistance states from insulator-metal transitions with down to 15 ps incubation times and switching energies starting from a few femtojoule. These orders of magnitude improvements from other memristive devices open up new possibilities for neuromorphic computing applications, outperforming the human brain at size and speed, with competitive energy consumption.
Keywords: Vanadium dioxide; memristor; resistive switching; picosecond; femtojoule