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HL: Fachverband Halbleiterphysik
HL 54: Ultra-fast Phenomena II
HL 54.6: Vortrag
Donnerstag, 20. März 2025, 16:30–16:45, H17
Attosecond light-driven charge injection in germanium — •Giacomo Inzani1,9, Lyudmyla Adamska2,3, Amir Eskandari-asl4, Nicola Di Palo1, Gian Luca Dolso1, Bruno Moio1, Luciano Jacopo D'Onofrio4,5, Alessio Lamperti6, Alessandro Molle6, Rocio Borrego-Varillas7, Mauro Nisoli1,7, Stefano Pittalis2, Carlo Andrea Rozzi2, Adolfo Avella4,5,8, and Matteo Lucchini1,7 — 1Dept. of Physics, Politecnico di Milano, Italy — 2CNR - Istituto Nanoscienze, Modena, Italy — 3Dept. of Physics, Mathematics and Informatics, University of Modena & Reggio Emilia, Italy — 4Dip. di Fisica, Università degli Studi di Salerno, Italy — 5CNR - SPIN, UoS di Salerno, Italy — 6CNR - IMM, Unit of Agrate Brianza, Italy — 7IFN - CNR, Milano, Italy — 8Unità CNISM di Salerno, Università degli Studi di Salerno, Italy — 9Present address: Dept. of Physics, University of Regensburg, Germany
The injection of charges from the valence to the conduction band of a semiconductor induced by an ultrashort pulse can tailor its electro-optical properties. This process typically occurs on time scales shorter than the laser period - for visible light, in the order of one femtosecond. Despite its relevance, few experiments studied the charge excitation process with attosecond temporal resolution. In this work, we combine attosecond transient reflection spectroscopy measurements to a dual cutting-edge theoretical approach, demonstrating that photoexcitation in Ge cannot be ascribed to a single physical mechanism. The interplay of multi-photon absorption, light-induced band dressing, and intra-band motion is crucial for determining the overall charge injection.
Keywords: Attosecond science; Ultrafast electron dynamics; Transient reflectivity spectroscopy; Photoinjection; Light-matter interaction