Regensburg 2025 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 57: Quantum Dots and Wires: Optics II
HL 57.10: Talk
Friday, March 21, 2025, 12:00–12:15, H13
Silicon nitride-based photonic integrated circuit interfaced via photonic wire bonds with InGaAs-QDs emitting at telecom wavelength — •Ulrich Pfister1, Daniel Wendland2,3, Florian Hornung1, Lena Engel1, Hendrik Hüging2, Elias Herzog1, Ponraj Vijayan1, Raphael Joos1, Erik Jung3, Michael Jetter1, Simone L. Portalupi1, Wolfram H. P. Pernice2,3, and Peter Michler1 — 1Institut für Halbleiteroptik und Funktionelle Grenzflächen (IHFG), Center for Integrated Quantum Science and Technology (IQST) and SCoPE, University of Stuttgart, Allmandring 3, 70569 Stuttgart, Germany — 2Institute of Physics and Center for Nanotechnology, University of Münster, 48149 Münster, Germany — 3Kirchhoff-Institute for Physics, University of Heidelberg, 69120 Heidelberg, Germany
Photonic integrated circuits (PICs) play a crucial role for realizing several quantum technologies in a small footprint. In this regard, hybrid approaches are beneficial for combining the highly developed silicon platform with the on-demand single-photon emission of III-V semiconductor quantum dots (QDs). We employed 3D laser writing technology to realize photonic wire bonds (PWBs) for funnelling single-photons from the III-V-based chip, containing the QDs emitting at 1550nm, into a Si3N4-based PIC [1]. An on-chip beamsplitter was used to measure a g(2)(0)=0.11±0.02, demonstrating the functionality of the hybrid approach on a single-photon level. Additionally, the average efficiency of the PWBs was precisely quantified.
[1] Ulrich Pfister, et al., arXiv:2411.05647
Keywords: InGaAs-QDs; PIC; Silicon; Telecom