Regensburg 2025 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 57: Quantum Dots and Wires: Optics II

HL 57.13: Vortrag

Freitag, 21. März 2025, 12:45–13:00, H13

Development of Stark-tuned InGaAs quantum dots emitting in the telecom O-band on silicon substrate — •Sarthak Tripathi, Kartik Gaur, Imad Limame, Priyabrata Mudi, Sven Rodt, and Stephan Reitzenstein — Institut für Festkörperphysik, Technische Universität Berlin, D-10623 Berlin

Quantum dots (QDs) are promising for single-photon emission, essen tial for quantum technologies like secure communication and quantum key distribution (QKD). In particular, InGaAs QDs that emit photons in the telecom O-band are especially valuable due to their compatibility with current metropolitan fiber-based QKD systems. Additionally, it is interesting to develop Si-compatible device concepts. Achieving High quality QDs on silicon are challenging due to lattice mismatch with III-V materials, leading to defects and performance degradation. To overcome this, we use a GaP buffer layer to reduce strain, improve lat tice matching, enabling high-quality QD growth with low defect den sities.By integrating epitaxial n- and p-doped GaAs layers with ohmic contacts, we apply an electric field to modify the QD energy levels via Stark effect, allowing controlled tuning of the emission wavelength. This tunability is crucial for aligning the QD emission with telecom standards or compensating for fabrication-induced variations. Optical and quantum optical characterizations confirm the effectiveness of this approach, demonstrating excellent quantum optical properties. These results highlight the potential of electrically tunable InGaAs QDs on Si as a scalable platform for quantum communication, compatible with Si-based technologies and fiber-based telecom networks.

Keywords: Quantum dots; Stark tuning; Telecom o-band; Epitaxy