Regensburg 2025 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 57: Quantum Dots and Wires: Optics II
HL 57.4: Vortrag
Freitag, 21. März 2025, 10:15–10:30, H13
Resonance fluorescence measurements on rapid thermally annealed self-assembled quantum dots — H. Mannel1, •F. Rimek1, M. Zöllner1, N. Schwarz1, N. Bart2, A. Ludwig2, A. D. Wieck2, A. Lorke1, and and M. Geller1 — 1Faculty of Physics and CENIDE, University Duisburg-Essen, Germany — 2Chair of Applied Solid State Physics, Ruhr-University Bochum, Germany
A single self-assembled quantum dots (QD) is one of the promising candidate as a bright (high photon rate) and stable (fourier-limited) linewidth single photon source [1]. They are typically grown by molecular beam epitaxy (MBE) and have photon emission energies in the near-infrared spectrum. There are several techniques to control the size, which shift the emission wavelength. The so-called indium flush is often used, where the tip of the dot is thermally flushed away [2]. Alternatively, the confinement can be altered by rapid thermal annealing (RTA) [3], which lets indium and gallium diffuse. Here, we investigate the optical properties of rapidly thermally annealed quantum dots. In particular, we study the effects of RTA on the resonance fluorescence line width. This is done by three different measurements. First, we scan over the applied gate voltage and calculate the linewidth using the Stark shift of the exciton. Second, we scan the linewidth directly with a tunable laser. In addition, we study the lifetime in pulsed resonant measurements. The change in the confinement potential might also change dephasing processes such as photoemission or the Auger effect. [1] N. Tomm et al., Nat. N. 16, 399-403 (2021). [2] H. Sasakura et al., JAP 102, 013515 (2007). [3] N. Perret et al., PRB 62, 5092 (2000).
Keywords: Quantum Dot; Self-Assembled; line width; rapid thermally annealing