Regensburg 2025 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 59: 2D Semiconductors and van der Waals Heterostructures VI
HL 59.6: Talk
Friday, March 21, 2025, 10:45–11:00, H15
Interlayer Exciton Traps in TMD heterobilayers — •Thomas Klokkers1,2, Mirco Troue1,2, Johannes Figueiredo1,2, Andreas Knorr3, Ursula Wurstbauer4, and Alexander Holleitner1,2 — 1Walter Schottky Institute, Technical University of Munich, Am Coulombwall 4a, 85748 Garching, Germany — 2Munich Center for Quantum Science and Technology (MCQST), Schellingstr. 4, 80799 Munich, Germany — 3Institute for Theoretical Physics, Nonlinear Optics and Quantum Electronics, Technical University of Berlin, 10623 Berlin, Germany — 4Institute of Physics, Münster University, Wilhelm-Klemm-Str. 10, 48149 Münster, Germany
Long-lived interlayer excitons in MoSe2/WSe2 heterostructures constitute a promising platform to explore many-body physics in a two-dimensional solid-state system. Introducing a trapping potential facilitates exploring the many-body regime by providing a platform to control the density of the interlayer exciton ensemble. Realizations of such exciton traps range from electrostatic strip gates to strain-induced potentials. In this work, we realize enhanced emission from interlayer excitons based on an optical trap. The laterally changed potential landscape allows the investigation of ensembles at high densities without the direct influence of temperature, excess charge carriers and laser-induced coherence.
Keywords: Excitons; Trapping