Regensburg 2025 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 6: Materials and Devices for Quantum Technology I
HL 6.12: Talk
Monday, March 17, 2025, 18:00–18:15, H13
In Situ Defect Density Determination of Spin Defects in Hexagonal Boron Nitride — Atanu Patra1, •Paul Konrad2, Andreas Sperlich2, Timur Biktagirov3, Thinh Tran4, Igor Aharonovich4, Sven Höfling1, and Vladimir Dyakonov2 — 1Technische Physik, Julius-Maximilians-University Würzburg, 97074 Würzburg — 2Experimentelle Physik 6, Julius-Maximilians-University Würzburg, 97074 Würzburg — 3Lehrstuhl für Theoretische Materialphysik, Universität Paderborn, 33095 Paderborn, Germany — 4School of Mathematics and Physical Sciences, University of Technology Sydney, Ultimo, NSW 2007, Australia
In recent years, the negatively charged boron vacancy (VB−) spin defects in hexagonal boron nitride (hBN) caught attention for their sensitivity to environmental parameters such as magnetic field, temperature, and pressure, making them ideal for quantum sensing. The optical emission from these defects, crucial for applications, depends on their density, which could -so far- not be determined directly for thin flakes. Our study identifies distinct Raman modes alongside the E2g peak in defect-enriched hBN. Polarization-dependent Raman measurements reveal that these modes arise from atomic vibrations associated with the VB− defects. Additionally, we corroborate this result by density functional theory. We investigate the interdependent relationship between the vibronic states and defect density and obtain a universally applicable method to directly determine the absolute spin-defect density in flakes by Raman spectroscopy alone.
Keywords: hBN; Boron-Vacancy; Raman Spectroscopy; Defect Density; 2D Materials