Regensburg 2025 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 6: Materials and Devices for Quantum Technology I
HL 6.2: Vortrag
Montag, 17. März 2025, 15:15–15:30, H13
tunable superconductivity in Ga-doped SixGe1-x via ion implantation and flash lamp annealing — •yu cheng1,2, yi li1,2, oliver steuer1, mao wang3, artur erbe1,2, manfred helm1,2, shengqiang zhou1, and slawomir prucnal1 — 1Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Dresden, Germany — 2TU Dresden, Dresden, Germany — 3Laboratory of Micro-Nano Optics, College of Physics and Electronic Engineering, Sichuan Normal University, Chengdu, PR China
Group-IV superconducting semiconductors offer promising opportunities for scalable superconductor-semiconductor platforms in quantum computing. However, realizing a superconducting phase in semiconductors requires doping concentrations beyond the metal-insulator transition (MIT). Achieving such high doping levels in silicon (Si) and germanium (Ge) is challenging due to the limited solid solubility of acceptors in these materials. Various advanced techniques have been developed to overcome this problem, such as gas immersion laser doping or ns-pulsed laser melting [1]. Here, we explore tunable superconducting states in Ga-hyperdoped SixGe1-x alloys by applying ion implantation followed by ms-range flash lamp annealing. We observed that the critical temperature depends on the Ge-concentration. Samples with the highest Ge content demonstrate the transition temperature (Tc) of 1.2 K, attributed to increased Ga solubility, while samples with 70% of Si shows Tc around 100 mK. Notably, all samples achieved carrier concentrations over solid solubility, illustrating the effects of hyperdoping on superconductivity.
Keywords: superconductivity; ion-implantation; flash lamp annealing; SiGe alloy; superconducting semiconductor