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HL: Fachverband Halbleiterphysik
HL 6: Materials and Devices for Quantum Technology I
HL 6.4: Vortrag
Montag, 17. März 2025, 15:45–16:00, H13
Dynamical reorientation of spin multipoles in silicon carbide by transverse magnetic fields — •Alberto Hernández-Mínguez1, Alexander V. Poshakinskiy2, Michael Hollenbach3, Paulo V. Santos1, and Georgy V. Astakhov3 — 1Paul-Drude-Institut für Festkörperelektronik, Berlin, Germany — 2ICFO-Institut de Ciències Fotòniques, Castelldefels, Spain — 3Helmholtz-Zentrum Dresden-Rossendorf, Dresden, Germany
The long-lived and optically addressable high-spin state of the negatively charged silicon vacancy (VSi) in silicon carbide makes it a promising system for applications in quantum technologies. Most studies of its spin dynamics have been performed under external magnetic fields applied along the symmetry axis of the VSi center. Here, we show that the application of a weak magnetic field perpendicular to the symmetry axis leads to a non-trivial behavior of the optically detected magnetic resonances (ODMRs) caused by the dynamical reorientation of the spin multipole under optical excitation. Particularly, we observe the inversion of the quadrupole-spin polarization in the excited state and the appearance of a dipole-spin polarization in the ground state. The latter is much higher than the thermal polarization and cannot be induced solely by optical excitation. Our theoretical model reproduces well all sharp features in the ODMR spectra and shine light on the complex dynamics of spin multipoles in these kinds of solid-state systems.
[1] A. Hernández-Mínguez et al., Phys. Rev. Appl. 22, 044021 (2024)
Keywords: spin dynamics; color centers; silicon vacancies; silicon carbide; optically detected magnetic resonance