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HL: Fachverband Halbleiterphysik
HL 6: Materials and Devices for Quantum Technology I
HL 6.5: Vortrag
Montag, 17. März 2025, 16:00–16:15, H13
The hBN defects database for quantum applications — •Chanaprom Cholsuk1,2, Asli Cakan1,2, Sujin Suwanna3, and Tobias Vogl1,2,4 — 1Department of Computer Engineering, School of Computation, Information and Technology, Technical University of Munich, 80333 Munich, Germany — 2Munich Center for Quantum Science and Technology (MCQST), 80799 Munich, Germany — 3Optical and Quantum Physics Laboratory, Department of Physics, Faculty of Science, Mahidol University, Bangkok 10400, Thailand — 4Abbe Center of Photonics, Institute of Applied Physics, Friedrich Schiller University Jena, 07745 Jena, Germany
Hexagonal boron nitride (hBN) has emerged as a solid-state platform for hosting a variety of defects for quantum applications. Identifying optimal defects for specific quantum applications has been challenging as some defects exhibit similar properties while others encounter strain. Comprehensive properties are therefore required. This work addresses this gap by utilizing density functional theory and open quantum system approaches to thoroughly characterize the properties of 257 defects and evaluate their potential for quantum emitter and quantum memory applications. This enables matching defects with suitable quantum applications. Furthermore, all findings are compiled into an accessible online database at https://h-bn.info, allowing one to compare our calculated optical fingerprints with experiments and other simulations. Consequently, this work enriches hBN defect resources, supporting progress in quantum technologies and defect identification.
Keywords: hexagonal boron nitride; defect; quantum technology; quantum emitter; quantum memory