Regensburg 2025 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 6: Materials and Devices for Quantum Technology I

HL 6.7: Talk

Monday, March 17, 2025, 16:45–17:00, H13

Luminescence of electron and ion beam irradiated hBN — •Jan Böhmer, Annkathrin Köhler, Christian T. Plass, and Carsten Ronning — Friedrich Schiller University, Jena, Germany

Defect centers in solid state materials have emerged as promising candidates for quantum emitters. Here, hexagonal boron nitride (hBN) has attracted much interest as an interesting material for the realization of room temperature single photon emitters (SPEs). Emitting defects can be specifically created by irradiation of hBN flakes and nanoparticles with (focused) electron and ion beams, which allows to modify the luminescence properties of the hBN samples and fabricate targeted localized SPEs. The effects of the irradiation on the luminescence spectrum were investigated using micro photoluminescence (µPL). The nature and applicability for SPEs were determined by g(2)-autocorrelation measurements as a function of the irradiation parameters.

Keywords: Hexagonal boron nitride (hBN); irradiation; Single photon emitters (SPE); Single photon sources (SPS)