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HL: Fachverband Halbleiterphysik

HL 6: Materials and Devices for Quantum Technology I

HL 6.8: Vortrag

Montag, 17. März 2025, 17:00–17:15, H13

Strain-induced tuning of quantum emitters in hexagonal boron nitride — •Tjorben Matthes^{1, 2}, Anand Kumar^{1, 2}, Mohammad Nasimuzzaman Mishuk^{1, 2}, and Tobias Vogl^{1, 2} — ¹Department of Computer Engineering, TUM School of Computation, Information and Technology, Technical University of Munich, 80333 Munich, Germany — ²Munich Center for Quantum Science and Technology (MCQST), 80799 Munich, Germany

In this talk, we will show our recent progress in controlling the emission characteristics of our single photon emitters in hexagonal boron Nitride (hBN).

We have previously demonstrated our results on the polarisation characteristics of both the absorption and the emission characteristics of our single photon emitters. By conducting a statistical analysis of a large array of emitters, we found some unexpected results that indicate a shift of the emission axes in one direction compared to the crystal axes. We suspected a strain induced by the exfoliation process as the cause. We, therefore, conduct now further tests deliberately inducing strain into the hBN flakes in which the emitters are embedded.

Keywords: Single Photon Source; 2D materials; hBN; quantum emitter; strain tuning