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Regensburg 2025 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 6: Materials and Devices for Quantum Technology I

HL 6.9: Talk

Monday, March 17, 2025, 17:15–17:30, H13

Impact of a magnetic field on low-temperature photoluminescence of indium-doped silicon — •Kevin Lauer1,2, Mario Bähr1, Richard Grabs1, Frank Long1,3, Martin Kaleta1, Andreas Frank1, Thomas Ortlepp1, Katharina Peh2, Noah Stiehm2, Rüdiger Schmidt-Grund2, Dirk Schulze2, and Stefan Krischok21CiS Forschungsinstitut für Mikrosensorik GmbH, Erfurt, Germany — 2Technische Universität Ilmenau, Institut für Physik, Ilmenau, Germany — 3Universität Göttingen, Göttingen, Germany

Acceptor-interstitial silicon (ASi-Sii)-defects [1] were proposed to be responsible for a gain loss in low-gain avalanche detectors (LGAD) and for an efficiency loss in silicon solar cells. Recently, it was speculated that this defect category could be relevant for silicon-based quantum technology, as well. To advance the understanding of these defects in silicon with respect to their potential use as qubits, low-temperature photoluminescence (PL) measurements are performed while subjecting the sample to magnetic fields. Silicon samples with and without indium doping were treated by a temperature quenching step to generate ASi-Sii-defects. The ASi-Sii-defect generation was done using a local laser quenching method as well as using a Bunsen burner with subsequent water quenching. As expected, the integrated PL intensity increased after this generation process. While the sample is subjected to magnetic fields, the integrated PL intensity changes significantly. Differences between samples with and without indium doping will be discussed. [1]K. Lauer et al., Phys. Status Solidi A, 219 (2022) 2200099

Keywords: silicon; defects

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