Regensburg 2025 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 60: Focus Session: Physics of the van der Waals Magnetic Semiconductor CrSBr II (joint session HL/MA)

HL 60.7: Vortrag

Freitag, 21. März 2025, 12:15–12:30, H17

Raman controlled lithium intercalation into CrSBr van der Waals structure — •Kseniia Mosina, Aljoscha Söll, Martin Veselý, Jiří Šturala, and Zdenek Sofer — Department of Inorganic Chemistry, University of Chemistry and Technology Prague, 166 28 Prague 6, Czech Republic.

Lithium intercalation into the van der Waals crystalline structure of layered transition metal dichalcogenides by means of chemical and electrochemical intercalation is a well-known method for studying semiconductor-metallic phase transitions. The layered semiconductor chromium sulphur bromine (CrSBr) in recent years becomes an ultimate playground for the studies of low-dimensional magneto-optical properties. The interlayer distance of CrSBr allows the easy cleavage and intercalation of the guest molecules within the crystalline structure. Conveniently air-stable, this material exhibits a direct band gap of 1.5 eV, an antiferromagnetic state in bulk and ferromagnetism in the monolayer. Here, we present the lithium intercalation method into the CrSBr structure by lithium-solvated electron solution. To monitor the lithiation process in real-time, we investigated the Raman spectra evolution upon lithium ion intercalation into a few-layered CrSBr flake. Our findings suggest that the quasi-one dimensional nature of CrSBr leads to weak interlayer hybridization along the b-direction, which facilitates the diffusion of guest ions by lowering the migration energy barrier and enables anisotropic Li+ diffusion. The reliable intercalation methodology allows tracking the intercalation process directly in the desired area favorable for device fabrication.

Keywords: CrSBr; intercalation; Raman spectra; semiconductors