Regensburg 2025 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 61: THz and MIR physics in semiconductors
HL 61.2: Talk
Friday, March 21, 2025, 11:00–11:15, H14
Characterization of SiC epilayers with terahertz time-domain spectroscopy — •Joshua Hennig1,2, Jens Klier1, Stefan Duran1, Christian Röder3, Franziska Beyer3, Kuei-Shen Hsu4, Jan Beyer4, Nadine Schüler5, Nico Vieweg6, Katja Dutzi6, Georg von Freymann1,2, and Daniel Molter1 — 1Department of Materials Characterization and Testing, Fraunhofer ITWM, Kaiserslautern — 2Department of Physics and Research Center OPTIMAS, RPTU Kaiserslautern-Landau — 3Department Energy Materials and Test Devices, Fraunhofer IISB, Erlangen — 4Institute of Applied Physics, Technische Universität Bergakademie Freiberg — 5Freiberg Instruments GmbH, Freiberg — 6TOPTICA Photonics AG, Gräfelfing
Silicon carbide (SiC), being a wide-bandgap and robust, temperature-stable semiconductor, is an up-and-coming material that already has applications in power electronics and in high-temperature environments. While the characterization of the electrical and optical properties of bulk semicondcutors with terahertz time-domain spectroscopy (TDS) has already been demonstrated, many applications make use of thin layers with thicknesses of a few tens of microns. Using the Drude model, we performed simulations with varying thicknesses and charge carrier densities of SiC epilayers showcasing the opportunities and possible limitations of TDS to characterize SiC epilayers. Finally, TDS measurements demonstrating the validity of the simulations were used to determine the charge carrier density of SiC epilayers.
Keywords: Terahertz time-domain spectroscopy; Charge carrier density; Silicon carbide; Drude model