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HL: Fachverband Halbleiterphysik
HL 62: 2D Semiconductors and van der Waals Heterostructures VII
HL 62.3: Vortrag
Freitag, 21. März 2025, 12:15–12:30, H15
Generation of luminescent defects in hBN by focused helium ion beam irradiation — •Amedeo Carbone1,2, Martijn Wubs1, Alexander W. Holleitner2, Christoph Kastl2, Alexander Huck3, and Nicolas Stenger1 — 1Department of Electrical and Photonics Engineering, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark — 2Walter Schottky Institute, Physik Department, Technical University of Munich, Am Coulombwall 4, 85748 Garching, Germany — 3Center for Macroscopic Quantum States (bigQ), Department of Physics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
Among the luminescent centres in hBN, which have recently gained attention because of their brightness and exceptional quantum properties at room temperature, the charged boron vacancy (V–B) defect stands out for its magnetic properties, which have significant applications in quantum sensing schemes [1]. In the present work [2] we irradiate hBN flakes with a focused helium ion beam to generate V–B defects, conduct optical and magnetically resolved characterization, and apply a theoretical model [3] to infer the generated density of charged emitters. These results are further compared to the estimated vacancy density from Molecular Dynamics simulations. Our work provides a systematic study of the defect generation efficiency by comparing different irradiation doses. [1] Gottscholl, A. et al., Nat. Mater. 19, 540-545 (2020), [2] Carbone, A. et al., in preparation, [3] Udvarhelyi, P. et al., npj Comp. Mat. 9, 150 (2023).
Keywords: hBN; ODMR; charged boron vacancy; MD; HIM