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HL: Fachverband Halbleiterphysik

HL 62: 2D Semiconductors and van der Waals Heterostructures VII

HL 62.4: Vortrag

Freitag, 21. März 2025, 12:30–12:45, H15

Impact of low-energy ion-irradiation induced defects on optical and vibrational properties of molybdenum disulfide — •Philipp Kraus, Eileen Schneider, Tobias Dierke, Stefan Wolff, Yuri Koval, and Janina Maultzsch — Chair of Experimental Physics, FAU Erlangen-Nürnberg, Erlangen

We present the controlled creation of vacancies in 2D materials, in particular graphene and molybdenum disulfide (MoS₂), by low-energy ion-irradiation. With Raman spectroscopy on exfoliated graphene flakes before and after irradiation, we determined the defect density to calibrate the ion dose of our setup. Then, we irradiated MoS₂ monolayers, grown via chemical vapor deposition (CVD), and determined the impact of the ion-induced defects on Raman and photoluminescence (PL) spectra. These results are additionally compared with density functional theory (DFT) calculations.

Keywords: Defects; MoS2; Ion-Irradiation