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Regensburg 2025 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 6: Materials and Devices for Quantum Technology I

Montag, 17. März 2025, 15:00–18:45, H13

15:00 HL 6.1 First-Principles Investigation of NV Centers in Silicon Carbide Polytypes — •Timur Biktagirov, Uwe Gerstmann, and Wolf Gero Schmidt
15:15 HL 6.2 tunable superconductivity in Ga-doped SixGe1-x via ion implantation and flash lamp annealing — •yu cheng, yi li, oliver steuer, mao wang, artur erbe, manfred helm, shengqiang zhou, and slawomir prucnal
15:30 HL 6.3 Direct printing of microlenses on hexagonal boron nitride to improve light outcoupling — •Daniel Klenkert, Paul Konrad, Andreas Sperlich, Vladimir Dyakonov, and Jens Ebbecke
15:45 HL 6.4 Dynamical reorientation of spin multipoles in silicon carbide by transverse magnetic fields — •Alberto Hernández-Mínguez, Alexander V. Poshakinskiy, Michael Hollenbach, Paulo V. Santos, and Georgy V. Astakhov
16:00 HL 6.5 The hBN defects database for quantum applications — •Chanaprom Cholsuk, Asli Cakan, Sujin Suwanna, and Tobias Vogl
16:15 HL 6.6 Scanning NV center thermometryElias Sfeir, Maxime Rollo, Yoann Baron, Felipe Favaro de Oliveira, Gediminas Seniutinas, Marcelo Gonzàlez, Mathieu Mathieu, Patrick Maletinsky, Jean-Baptiste Jager, Jean-Michel Gérard, Vincent Jacques, •Aurore Finco, and Isabelle Robert-Philip
  16:30 15 min. break
16:45 HL 6.7 Luminescence of electron and ion beam irradiated hBN — •Jan Böhmer, Annkathrin Köhler, Christian T. Plass, and Carsten Ronning
17:00 HL 6.8 Strain-induced tuning of quantum emitters in hexagonal boron nitride — •Tjorben Matthes, Anand Kumar, Mohammad Nasimuzzaman Mishuk, and Tobias Vogl
17:15 HL 6.9 Impact of a magnetic field on low-temperature photoluminescence of indium-doped silicon — •Kevin Lauer, Mario Bähr, Richard Grabs, Frank Long, Martin Kaleta, Andreas Frank, Thomas Ortlepp, Katharina Peh, Noah Stiehm, Rüdiger Schmidt-Grund, Dirk Schulze, and Stefan Krischok
17:30 HL 6.10 Fabrication, characterization and deformation of Si/SiGe membranes for spin qubit devices — •Lucas Marcogliese, Ouviyan Sabapathy, Rudolf Richter, Dominique Bougeard, and Lars R. Schreiber
17:45 HL 6.11 Design and optimization of bimodal cavities coupled to multi-level quantum systems — •Oscar Camacho Ibarra, Jan Gabriel Hartel, Atzin Ruiz Perez, Sonja Barkhofen, and Klaus Jöns
18:00 HL 6.12 In Situ Defect Density Determination of Spin Defects in Hexagonal Boron NitrideAtanu Patra, •Paul Konrad, Andreas Sperlich, Timur Biktagirov, Thinh Tran, Igor Aharonovich, Sven Höfling, and Vladimir Dyakonov
18:15 HL 6.13 Electric-circuit realization of the Floquet-SSH-Model — •Christine Barko, Alexander Stegmaier, Alexander Fritzsche, Riccardo Sorbello, Martin Greiter, Hauke Brand, Maximilian Hofer, Udo Schwingenschlögl, Roderich Moessner, Ching Hua Lee, Alexander Szameit, Andrea Alù, Tobias Kießling, and Ronny Thomale
18:30 HL 6.14 Erbium dopants in nanophotonic resonators — •Andreas Gritsch, Alexander Ulanowski, Stephan Rinner, Johannes Früh, Jakob Pforr, and Andreas Reiserer
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