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HL: Fachverband Halbleiterphysik

HL 7: Semiconductor Lasers

HL 7.1: Vortrag

Montag, 17. März 2025, 15:00–15:15, H14

Development and Analysis of a VECSEL based on InGaAs Quantum Dots for Emissions in the Telecom O-Band — •Justus Unfried, Philipp Noack, Rebecca Rühle, Michael Jetter, and Peter Michler — Institut für Halbleiteroptik und funktionelle Grenzflächen (IHFG), Center for Integrated Quantum Science and Technology (IQST) and SCoPE, University of Stuttgart, Allmandring 3, 70569 Stuttgart, Germany

The advancement of sophisticated laser technologies for high-resolution spectroscopy and sensing applications has stimulated interest in versatile, high-performance light sources. Vertical External-Cavity Surface-Emitting Lasers (VECSELs) based on InGaAs quantum dots (QDs) are promising for emissions in the telecommunications O-band and offer broad wavelength tunability, high output power, and excellent beam quality. This study focuses on optimizing QD layers through metal-organic vapor-phase epitaxy (MOVPE), utilizing the Stranski-Krastanov growth mode, followed by laser performance characterization. To enhance QD density and emission characteristics, the gallium precursor was substituted with TEGa, exhibiting a higher decomposition rate at lower growth temperatures. The indium supply was modified, and the duration of the arsine interruption following QD deposition was examined to increase density and reduce large In-clusters. Subsequently, 12 of these high-density QD layers are deposited on a distributed Bragg reflector (DBR) structure, completing the VECSEL. This laser development is accompanied by structural and performance characterizations.

Keywords: VECSEL; InGaAs; Quantum dots; MOVPE; Laser