Regensburg 2025 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
HL: Fachverband Halbleiterphysik
HL 7: Semiconductor Lasers
HL 7.2: Talk
Monday, March 17, 2025, 15:15–15:30, H14
Comparison between a 675nm and 532nm pumped 4x3 InGaAsP QW VECSEL emitting at around 760nm in a V-Shaped resonator — •Rebecca Rühle1, Maxim Leyzner2, Marwan Abdou Ahmed2, Thomas Graf2, Michael Jetter1, and Peter Michler1 — 1Institut für Halbleiteroptik und Funktionelle Grenzflächen, Center for Integrated Quantum Science and Technology (IQST) and SCoPE, Universität Stuttgart, Allmandring 3, 70569 Stuttgart, Germany — 2Institut für Strahlwerkzeuge, Universität Stuttgart, Pfaffenwaldring 43, 70569 Stuttgart, Germany
The quantum defect between the emission and the pump wavelengths has a substantial impact on the performance of a vertical external-cavity surface-emitting lasers (VECSEL). An increase in the wavelength of the pump laser should result in an improvement in thermal behavior and the laser performance. One disadvantage is that the pump absorption is reduced, given that the pump energy is typically below the barrier bandgap. In our previous studies, the GaInP barrier of our InGaAsP VECSEL structure was modified to absorb pump light at a wavelength of 675nm. Power measurements were conducted with a 675nm pump laser and a 532nm pump laser, employing the aforementioned adapted structure. By varying the reflectivity of the outcoupling mirror in the V-shaped resonator, we gain further insight into the absorption characteristics within the active region of the VECSEL. Due to the specifications of the laser source, the pump spot size was approximately 310µmx230µm, resulting in a multimode emission from the VECSEL rather than single mode for both pumplasers.
Keywords: VECSEL; semiconductor disk laser; deep red emission