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Regensburg 2025 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 9: Oxide Semiconductors I

Montag, 17. März 2025, 15:00–16:30, H17

15:00 HL 9.1 Nitrogen Doping of Sputtered BiVO4 Thin Films — •Hannah Sassenfeld, Tsedenia Zewdie, Ian D. Sharp, and Verena Streibel
15:15 HL 9.2 Plasma Plume Deflection and Target Surface Roughness During Pulsed Laser Deposition of Functional Oxides — •Jonas Elz, Holger von Wenckstern, and Marius Grundmann
15:30 HL 9.3 Analysis of film thickness distributions for combinatorial pulsed laser deposition — •Clemens Petersen, Marius Grundmann, and Holger von Wenckstern
15:45 HL 9.4 Influence of different gate metals on α-Ga2O3 MESFET device performance — •Sebastian Köpp, Clemens Petersen, Sofie Vogt, Holger von Wenckstern, and Marius Grundmann
16:00 HL 9.5 Adsorption-controlled growth of κ-Ga2O3 — •Alexander Karg, Niklas Krantz, Manuel Alonso-Orts, Marco Schowalter, Patrick Vogt, Andreas Rosenauer, and Martin Eickhoff
16:15 HL 9.6 Realization of highly rectifying pn-heterojunctions on pulsed laser deposited α-Ga2O3 thin films — •Paul Bokemeyer, Sofie Vogt, Clemens Petersen, Holger von Wenckstern, and Marius Grundmann
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