Regensburg 2025 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 9: Oxide Semiconductors I

HL 9.3: Vortrag

Montag, 17. März 2025, 15:30–15:45, H17

Analysis of film thickness distributions for combinatorial pulsed laser deposition — •Clemens Petersen, Marius Grundmann, and Holger von Wenckstern — Universität Leipzig Felix-Bloch-Institut für Festkörperphysik, Leipzig, Deutschland

Recently combinatorial deposition methods have increasingly gained scientists* attention, due to the high experimental throughput and resource-wise efficiency they offer in materials discovery. They enable fast screening of material properties of multinary material systems using just a single sample. By employing pulsed laser deposition with our segmented target approach [1] we realized the deposition of α-(Al_xGa_1−x)₂O₃ with continuous composition spread over the whole composition range on a single 2-inch sapphire wafer [2]. Accompanied by the usage of high-throughput measurements such as spectroscopic ellipsometry and X-ray diffraction, the characterization of physical properties with high chemical resolution and comparably low efforts becomes feasible.
Here we utilize a predictive numerical model, based on the corrected plasma expansion description of Anisimov et al. [3], for the calculation of binary growth rates of group-IIII and transition metal sesquioxides. Further the model can be applied to predict and model elemental composition and thickness distributions of ternary alloys for these materials. [1] H. von Wenckstern et al., pss(b), Vol. 257, 1900626 [2] A. Hassa et al., pss(b), Vol. 258, 2000394 [3] S. I. Anisimov et al., Phys. rev. B, Vol 48, 12076.

Keywords: PLD; Combinatorial; High-Throughput; Thin film growth; Epitaxy