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HL: Fachverband Halbleiterphysik

HL 9: Oxide Semiconductors I

HL 9.4: Vortrag

Montag, 17. März 2025, 15:45–16:00, H17

Influence of different gate metals on α-Ga2O3 MESFET device performance — •Sebastian Köpp, Clemens Petersen, Sofie Vogt, Holger von Wenckstern, and Marius Grundmann — Universität Leipzig, Felix Bloch Institute for Solid State Physics, Semiconductor Physics Group, Leipzig, Germany

We present metal-semiconductor field effect transistors (MESFET) on α-Ga2O3 grown by pulsed laser deposition in a two-step process on Al2O3 [5]. The MESFETs exhibit high on/off ratios above 9 orders of magnitude and subthreshold swings as low as 100 mV/dec. We evaluate different gate materials in an effort to optimize device switching and breakdown behaviour.
With its ultra-wide bandgap of 5.3 eV to 5.6 eV [1,2] and a high predicted breakdown field of 10 MV/cm [3], α-Ga2O3 is a promising material for high-power devices, as well as deep-UV photodetectors. α-Ga2O3, being isostructural to aluminium oxide, allows for heteroepitaxial growth on cost-efficient sapphire substrates, and also opens up the option of α-(AlxGa1-x)2O3 alloys [4], potentially pushing device performance even further.

[1] A. Segura et al., Phys. Rev. Materials 1, 024604 (2017)
[2] E. Ahmadi et al., J. Appl. Phys. 126, 160901 (2019)
[3] M. Biswas and H. Nishinaka, APL Mater. 10, 060701 (2022)
[4] J. Steele et al., APL Mater. 12, 041113 (2024)
[5] S. Vogt et al., Phys. Status Solidi A, 220 2200721 (2023)

Keywords: Gallium oxide; Transistor; MESFET; device