Regensburg 2025 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 9: Oxide Semiconductors I
HL 9.5: Talk
Monday, March 17, 2025, 16:00–16:15, H17
Adsorption-controlled growth of κ-Ga2O3 — •Alexander Karg1, Niklas Krantz1, Manuel Alonso-Orts1,2, Marco Schowalter1,2, Patrick Vogt1,3, Andreas Rosenauer1,2, and Martin Eickhoff1,2 — 1Institute of Solid State Physics, University of Bremen, Otto-Hahn-Allee 1, 28359 Bremen, Germany — 2MAPEX Center for Materials and Processes, University of Bremen, Bibliotheksstraße 1, 28359 Bremen, Germany — 3Max Planck Institute for solid state research, Heisenbergstraße 1, 70569 Stuttgart, Germany
The ultra-wide band gap semiconductor Ga2O3 can crystallize in at least 5 different polymorphs. For one of these, the metastable κ-Ga2O3, a spontaneous polarization along the c-axis is predicted [1]. Utilizing this property in heterostructure devices requires the formation of sharp, distinct interfaces between different alloyed layers to achieve high sheet carrier densities.
The recent development of suboxide MBE (S-MBE) has enabled the adsorption-controlled growth of Ga2O3 thin films [2]. In this contribution, S-MBE is specifically applied to the growth of metastable, orthorhombic κ-Ga2O3. The growth process, phase stabilization, and their impact on layer properties are analyzed in detail. This is combined with the use of indium as surfactant. Additionally, the study is complemented by the realization of κ-Ga2O3-based heterostructures using suboxide MBE [3].
[1] Maccioni et al., Appl. Phys. Express 9, 041102 (2016);[2] Vogt et al., U.S. Patent No. 11,462,402 (2022);[3] Karg et al., APL Mater. 11, 091114 (2023)
Keywords: MBE; Ga2O3; ultra-wide band gap; semiconductor