Regensburg 2025 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 9: Oxide Semiconductors I

HL 9.6: Vortrag

Montag, 17. März 2025, 16:15–16:30, H17

Realization of highly rectifying pn-heterojunctions on pulsed laser deposited α-Ga₂O₃ thin films — •Paul Bokemeyer, Sofie Vogt, Clemens Petersen, Holger von Wenckstern, and Marius Grundmann — University Leipzig, Felix-Bloch-Institut für Festkörperphysik, Linnestr. 5, Leipzig, Germany

The wide band gap of about 5.3 eV^[1], the possibility for adjusting the band gap energy by alloying with isostructural aluminum oxide or indium oxide^[1] and a high expected breakdown field of up to 10 MV/cm^[2], renders the corundum α-phase of Ga₂O₃ interesting for high power applications. We present lateral p⁺n-heterojunction diodes on α-Ga₂O₃:Sn grown by pulsed laser deposition(PLD) using a two step approach^[3]. Room temperature deposited ZnCoO(ZCO) (PLD), NiO (PLD) and CuI (PLD and sputtering) were used as p⁺-type materials. We further investigated the influence of a remote oxygen plasma treatment prior to the deposition of the p-type layers on the device performance. High current rectification ratios of of 8.2 (ZCO), 7.8 (NiO), and 5.1 (CuI) orders of magnitude at ± 3V were achieved. Additionally, α-Ga₂O₃:Zr junction-field-effect-transistors(JFETs) with ZCO and NiO as gate materials were fabricated, yielding on/off ratios of more than 9 orders of magnitude and sub-threshold-swings down to 119 mV/dec.

^[1] A. Hassa et.al., J.Phys. D: Appl. Phys. 54, 223001 (2021)
^[2] M. Biswas et al., APL Mater. 10, 060701 (2022)
^[3] S. Vogt et al., Phys. Status Solidi A, 220 2200721 (2023)

Keywords: Alpha Gallium Oxide; pn-Heterojunctions; Junction Field-Effect Transistors