Regensburg 2025 – wissenschaftliches Programm

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KFM: Fachverband Kristalline Festkörper und deren Mikrostruktur

KFM 14: Poster

KFM 14.4: Poster

Mittwoch, 19. März 2025, 17:00–18:30, P1

Optimizing pre-annealing growth for obtaining pattern fidelity of highly ordered GaAs nanowires — •Juliane Koch¹, Jiajia Qiu², Chris Bohlemann¹, David Ostheimer¹, Peter Kleinschmidt¹, Huaping Zhao², Yong Lei², and Thomas Hannappel¹ — ¹TU Ilmenau, Institute for Physics, Fundamentals of Energy Materials, Ilmenau, Germany — ²TU Ilmenau, Institute for Physics, Applied Nanophysics, Ilmenau, Germany

Bottom-up grown III-V semiconductor nanowires (NWs) offer significant potential for advanced electrical and optoelectronic device applications. This study presents a fabrication strategy for highly ordered GaAs NW arrays by combining a non-lithographic nanostructuring technique with metalorganic vapor phase epitaxy (MOVPE). Uniform Au nano-disk arrays, created using anodic aluminum oxide templates, act as catalysts for the subsequent NW growth. The special fabrication process of the Au nano-disks prevents undesired substrate imprinting, which leads to a different behavior than previously utilized methods, namely to an Au particle diffusion during the MOVPE process. The nucleation duration, optimized in terms of the Au particle volume, is crucial for maintaining array uniformity. A short nucleation period fails to anchor particles, resulting in undesired diffusion. To resolve this, pre-annealing nucleation is extended to initiate III-V growth of a pedestal structure that secures the array's highly ordered geometry. A detailed analysis of MOVPE sub-processes supports the development of a refined growth model.

Keywords: Nanowire; Metalorganic Vapor Phase Epitaxy; Patterning