Regensburg 2025 – scientific programme
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KFM: Fachverband Kristalline Festkörper und deren Mikrostruktur
KFM 4: (Multi)ferroic States: From Fundamentals to Applications (II)
KFM 4.3: Talk
Monday, March 17, 2025, 12:00–12:15, H9
Domain and domain wall conductance in the vicinity of metal-semiconductor contacts — •Ruben Dragland1, Leonie Richarz1, Ingvild Hansen1, Manuel Zahn1, Jiali He1, Zewu Yan2, Edith Bourret2, Mario Hentschel3, and Dennis Meier1 — 1NTNU Norwegian University of Science and Technology, Trondheim, Norway — 2Lawrence Berkeley National Laboratory, Berkeley, CA,USA — 3University of Stuttgart, Stuttgart, Germany
Ferroelectric domain walls hold promise as functional quasi-2D systems and are intensively studied as key electronic elements for next-generation nanotechnology. Despite their outstanding application potential, however, little is known about the performance in actual device geometries and the contact phenomena that co-determine the current injection. In this study, we perform a systematic analysis of the local transport behavior of the ferroelectric semiconductor ErMnO3 in the vicinity of different electrode materials. By applying electron beam lithography and evaporation, we design metal-semiconductor contacts with varying work functions and investigate the impact on the electronic conductance and respective barrier formation. Combining conductive atomic force microscopy (cAFM), Kelvin probe force microscopy (KPFM), as well as mesoscopic probe techniques, we correlate the band bending at the interface to the measured conductance of domains and domain walls. Our results are relevant for the integration of ferroelectric domain walls and the understanding of the nanoscale physics at metal-semiconductor junctions in ferroelectrics in general.
Keywords: Ferroelectric domain walls; Metal-semiconductor contact; Scanning Probe Microscopy