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KFM: Fachverband Kristalline Festkörper und deren Mikrostruktur

KFM 8: (Multi)ferroic States: From Fundamentals to Applications (III)

KFM 8.5: Vortrag

Dienstag, 18. März 2025, 10:45–11:00, H9

Ultrafast control of interlayer ferroelectricity in h-BN — •Pooja Rani and Dominik M. Juraschek — Eindhoven University of Technology, Eindhoven, Netherlands

Two-dimensional ferroelectrics in nanoscale systems have received increasing interest due to their potential applications in the areas of memory storage and sensing. Among these materials, bilayer hexagonal boron nitride (h-BN) is a promising material for studying interlayer ferroelectricity because of its out-of-plane polarization that can be reversed by changing the stacking order. Using the first-principles simulation, we investigate the theoretical aspects of ultrafast control of interlayer ferroelectricity in h-BN to determine how the polarization can switch by light-induced shear motion. This phononic sliding mechanism would be particularly favourable since it provides a potential way of modulating ferroelectric behaviour at the nanoscale, creating an entirely novel path for the development of tuneable ferroelectric materials. Specifically, we focus on the excitation of the high-energy degenerate modes by an ultrashort mid-infrared pulse coupled to the low-energy shear and out-of-plane modes. Our findings suggest that the shear modes can significantly enhance the ferroelectric polarisation in h-BN, and we explore whether the ferroelectricity can be switched through this mechanism. With this, observing how out-of-plane modes affect ferroelectric polarization or interlayer ferroelectricity in h-BN will be interesting.

Keywords: Ultrafast; Interlayer ferroelectricity; Polarization; Phononic; Shear